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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

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Guangzhou Sande Electric Co.,Ltd.

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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

Name: Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
Brand: Toshiba
Price: 1 USD

Wholesale Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module from china suppliers

Brand Name : Toshiba

Model Number : MG200Q1US51

Certification : ROHS,CE,UL,CCC,VDE

Place of Origin : Japan

MOQ : 1pcs

Price : Negotiable

Payment Terms : Western Union, T/T, L/C,Paypal

Supply Ability : 1000pcs/Day

Delivery Time : 0-2 days

Packaging Details : Original Packing With Good Protection Material

Application : High Power Switching

Alternate Item Number : MG2OOQ1US51

Condition : New

Warranty : One Year

Product Name : Transistor Module

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Toshiba IGBT Power Module MG200Q1US51 Transistor Module

MG200Q1US51

Product Description

Manufactured by: Toshiba America, Inc.
Part number: MG200Q1US51

Part Category: Transistors
Description: 300A, 1200V, N-CHANNEL IGBT
Collector-Emitter Voltage: 1200V
Gate-Emitter Voltage: 20V
Collector Current (DC): 300A
Forward Current: (DC): 200A
Collector Power Dissipation: 1500W
Junction Temperature: 150C
Isolation Voltage (AC 1 min.): 2500V
Input Capacitance (VCE=10V, VGE=0,f=1MHz): 24nF
Switching Time: (Inductive Load VCC=600V, IC=200A, VGE=15V, RG=4.7Ω)
-Turn-on Time: 0.05s typ.
-Rise Time: 0.05s typ.
-Turn-on Time: 0.2s typ.
-Turn-off Delay Time: 0.5s typ.
-Fall Time: 0.1s typ. ; 0.3s max.
-Turn-off Time: 0.6s typ.
Forward Voltage(IF=200A, VGE=0): 2.4V typ. ;3.5V max
Reverse Recovery Time: 0.15s typ. ; 0.3s max.
(IF=200A, VGE=-10V, di/dt=700A/s)

Features

High input impedance
High Speed
Low saturation voltage
Enhancement-mode
Electrodes are isolated from case

F&A

Do you have any partner in this field?

Our company has good-relationship partners in automation control field. So we can alwasy get supporot for price and stock.

What is your forecast for this industry?

As more and more work done by machine,our field has lofty propect for many years.

What is your resources?

Our team and our channel both in purchasing and sales.
Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

Product Tags:

fuji igbt modules

intelligent power module

Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module Images

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